GALLIUM NITRIDE (GaN) JFET
Drain-Source Voltage: 650V
Transient Drain-Source Voltage: 800V
Drain-Source On-State Resistance: 100mΩ
Typical Total Gate Charge: 10nC
Continuous Drain Current: 45A
▲ Bare die on tape
▲ Normally on device
▲ Fits perfectly in constant current source as well as in cascode applications
▲ Voltage controlled
▲ Fastest switching without temperature dependency
▲ Ultra-low ESR and gate charge QG
Datasheet 
