SILICON CARBIDE (SiC) SCHOTTKY DIODE
Repetitive Peak Reverse Voltage: 1200V
Continuous Forward Current: 10A
Total Capacitive Gate Charge at 25°C: 52nC
Diode Forward Voltage at 25°C: 1.48V
Capacitance Stored Energy: 27µJ
▲ THT type
▲ Excellent surge capability
▲ Easy paralleling due to positive VF temperature coefficient
▲ TO-247-2L package
▲ Low forward voltage
▲ Temperature independent switching
Datasheet 
