SILICON CARBIDE (SiC) MOSFET
Drain-Source Voltage: 1200V
Continuous Drain Current: 115A
Drain-Source On-State Resistance: 11mΩ
Reverse Transfer Capacitance: 6pF
Power Dissipation: 290W
▲ THT type
▲ N-channel enhancement mode
▲ Low on-resistance and capacitance
▲ TO-247-4L package with Kelvin Source connection
▲ Avalanche ruggedness
▲ Elimination of voltage drops over the source inductance
Datasheet 
