SILICON CARBIDE (SiC) MOSFET
Drain-Source Voltage: 1200V
Continuous Drain Current: 20A
Drain-Source On-State Resistance: 160mΩ
Reverse Transfer Capacitance: 18pF
Power Dissipation: 118W
▲ THT type
▲ N-channel enhancement mode
▲ Low on-resistance and capacitance
▲ TO-247-3L package
▲ Avalanche ruggedness
▲ Especially for high system efficiency
Datasheet 
