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Manufacturer Group of Technology®

SiC Schottky Diode ▲ 1200V ▲ 10A ▲ B1D10120E

SKU: B1D10120E
Product Details

SILICON CARBIDE (SiC) SCHOTTKY DIODE


Repetitive Peak Reverse Voltage: 1200V

Continuous Forward Current: 10A

Total Capacitive Gate Charge at 25°C: 52nC

Diode Forward Voltage at 25°C: 1.48V

Capacitance Stored Energy: 27µJ 


▲ SMD type

▲ Excellent surge capability

▲ Easy paralleling due to positive VF temperature coefficient

▲ TO-252-2L (DPAK) package

▲ Low forward voltage

▲ Temperature independent switching



Datasheet 

SiC Schottky Diode ▲ 1200V ▲ 10A ▲ B1D10120E