SILICON (Si) MOSFET ▲ DUAL N-Channel
Drain-Source Voltage: 100V
Continuous Drain Current: 2.9A
Drain-Source On-State Resistance at Vgs 10V: 120mΩ
Total Gate Charge at Vgs 10V: 9.8nC
Power Dissipation: 2W
▲ SMD type
▲ Dual N-channel enhancement mode
▲ High cell density for low on-resistance
▲ SO-8 package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
