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GaN FET ▲ 650V ▲ 130mΩ ▲ GPT65Z4YMR

SKU: GPT65Z4YMR
Product Details

GALLIUM NITRIDE (GaN) FET


Drain-Source Voltage: 650V

Transient Drain-Source Voltage: 800V

Drain-Source On-State Resistance: 130mΩ

Typical Total Gate Charge: 38nC

Continuous Drain Current: 18A 


▲ SMD type

▲ Normally off device

▲ Easy to drive with standard MOSFET driver

▲ Small size in 8mm x 8mm ▲ Thin DFN8080 package

▲ Moisture Sensitivity Level ▲ MSL 3

▲ Ultra-low QRR and very robust design



Datasheet 

GaN FET ▲ 650V ▲ 130mΩ ▲ GPT65Z4YMR