SILICON CARBIDE (SiC) SCHOTTKY DIODE
Repetitive Peak Reverse Voltage: 650V
Continuous Forward Current: 2 x 8A
Total Capacitive Gate Charge at 25°C: 24nC/48nC
Diode Forward Voltage at 25°C: 1.44V
Capacitance Stored Energy: 6µJ/12µJ
▲ THT type
▲ Common cathode circuit configuration
▲ Easy paralleling due to positive VF temperature coefficient
▲ TO-247-3L package
▲ Low forward voltage
▲ Temperature independent switching
Datasheet