SILICON CARBIDE (SiC) SCHOTTKY DIODE
Repetitive Peak Reverse Voltage: 650V
Continuous Forward Current: 20A
Total Capacitive Gate Charge at 25°C: 65nC
Diode Forward Voltage at 25°C: 1.3V
Capacitance Stored Energy: 16µJ
▲ SMD type
▲ Excellent surge capability
▲ Easy paralleling due to positive VF temperature coefficient
▲ TO-263-3L (D2PAK) package
▲ Temperature independent switching
▲ Ultra-low forward voltage and high surge current
Datasheet