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SiC Schottky Diode ▲ 650V ▲ 4A ▲ B2D04065D

SKU: B2D04065D
Product Details

SILICON CARBIDE (SiC) SCHOTTKY DIODE


Repetitive Peak Reverse Voltage: 650V

Continuous Forward Current: 4A

Total Capacitive Gate Charge at 25°C: 12nC

Diode Forward Voltage at 25°C: 1.4V

Capacitance Stored Energy: 3µJ 


▲ SMD type

▲ Excellent surge capability

▲ Easy paralleling due to positive VF temperature coefficient

▲ Flat DFN 5x6 package

▲ Temperature independent switching

▲ Ultra-low forward voltage and high surge current



Datasheet 

SiC Schottky Diode ▲ 650V ▲ 4A ▲ B2D04065D