SILICON CARBIDE (SiC) SCHOTTKY DIODE
Repetitive Peak Reverse Voltage: 650V
Continuous Forward Current: 2 x 10A
Total Capacitive Gate Charge at 25°C: 30nC/60nC
Diode Forward Voltage at 25°C: 1.3V
Capacitance Stored Energy: 7µJ/14µJ
▲ THT type
▲ Common cathode circuit configuration
▲ Easy paralleling due to positive VF temperature coefficient
▲ Temperature independent switching
▲ Ultra-low forward voltage and high surge current
▲ TO3PF-3L package ▲ Electrical insulated mounting tab
Datasheet