SILICON (Si) MOSFET ▲ DUAL P-Channel
Drain-Source Voltage: -60V
Continuous Drain Current: -3.1A
Drain-Source On-State Resistance at Vgs -10V: 120mΩ
Total Gate Charge at Vgs -10V: 21nC
Power Dissipation: 2W
▲ SMD type
▲ Dual P-channel enhancement mode
▲ High cell density for low on-resistance
▲ SO-8 package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
