SILICON (Si) MOSFET ▲ SINGLE N-Channel
Drain-Source Voltage: 40V
Continuous Drain Current: 12.4A
Drain-Source On-State Resistance at Vgs 10V: 10.2mΩ
Total Gate Charge at Vgs 4.5V: 14.5nC
Power Dissipation: 2.5W
▲ SMD type
▲ Single N-channel enhancement mode
▲ High cell density for low on-resistance
▲ SO-8 package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
