SILICON (Si) MOSFET ▲ SINGLE P-Channel
Drain-Source Voltage: -30V
Continuous Drain Current: -16.4A
Drain-Source On-State Resistance at Vgs 10V: 5.8mΩ
Total Gate Charge at Vgs 10V: 119nC
Power Dissipation: 2.5W
▲ SMD type
▲ Single P-channel enhancement mode
▲ High cell density for low on-resistance
▲ SO-8 package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
