SILICON (Si) MOSFET ▲ SINGLE P-Channel
Drain-Source Voltage: -150V
Continuous Drain Current: -2.3A
Drain-Source On-State Resistance at Vgs -10V: 240mΩ
Total Gate Charge at Vgs -10V: 33nC
Power Dissipation: 2.5W
▲ SMD type
▲ Single P-channel enhancement mode
▲ Optimized for low gate charge
▲ SO-8 package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
