SILICON (Si) MOSFET ▲ SINGLE N-Channel
Drain-Source Voltage: 60V
Continuous Drain Current: 20.7A
Drain-Source On-State Resistance at Vgs 10V: 45mΩ
Total Gate Charge at Vgs 4.5V: 9.7nC
Power Dissipation: 34.7W
▲ THT type
▲ Single N-channel enhancement mode
▲ High cell density for low on-resistance
▲ TO251-3L package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
