SILICON (Si) MOSFET ▲ SINGLE N-Channel
Drain-Source Voltage: 700V
Continuous Drain Current: 3.5A
Drain-Source On-State Resistance at Vgs 10V: 3.3Ω
Total Gate Charge at Vgs 10V: 14nC
Power Dissipation: 56W
▲ THT type
▲ Single N-channel enhancement mode
▲ High cell density for low on-resistance
▲ TO251-3L package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet