SILICON (Si) MOSFET ▲ SINGLE N-Channel
Drain-Source Voltage: 150V
Continuous Drain Current: 125A
Drain-Source On-State Resistance at Vgs 10V: 7.2mΩ
Total Gate Charge at Vgs 10V: 67nC
Power Dissipation: 215W
▲ THT type
▲ Single N-channel enhancement mode
▲ High cell density for low on-resistance
▲ TO220-3L package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet