SILICON (Si) MOSFET ▲ SINGLE N-Channel
Drain-Source Voltage: 1000V
Continuous Drain Current: 4A
Drain-Source On-State Resistance at Vgs 10V: 3.8Ω
Total Gate Charge at Vgs 10V: 27nC
Power Dissipation: 166W
▲ THT type
▲ Single N-channel enhancement mode
▲ High cell density for low on-resistance
▲ TO220-3L package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
