SILICON (Si) MOSFET ▲ SINGLE N-Channel
Drain-Source Voltage: 650V
Continuous Drain Current: 1.3A
Drain-Source On-State Resistance at Vgs 10V: 15Ω
Total Gate Charge at Vgs 10V: 5.7nC
Power Dissipation: 41W
▲ SMD type
▲ Single N-channel enhancement mode
▲ High cell density for low on-resistance
▲ TO263-3L (D2PAK) package
▲ RoHS compliant
▲ With ESD diode between gate and source
Datasheet 
