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N-CH FET ▲ 650V ▲ 56mΩ ▲ 46.7A ▲ CEB46N65S

SKU: CEB46N65S
Product Details

SILICON (Si) MOSFET ▲ SINGLE N-Channel


Drain-Source Voltage: 650V

Continuous Drain Current: 46.7A

Drain-Source On-State Resistance at Vgs 10V: 56mΩ

Total Gate Charge at Vgs 10V: 100nC

Power Dissipation: 305W 


▲ SMD type

▲ Single N-channel enhancement mode

▲ High cell density for low on-resistance

▲ TO263-3L (D2PAK) package

▲ RoHS compliant

▲ High power and current handling capability



Datasheet 

N-CH FET ▲ 650V ▲ 56mΩ ▲ 46.7A ▲ CEB46N65S