SILICON (Si) MOSFET ▲ SINGLE N-Channel
Drain-Source Voltage: 250V
Continuous Drain Current: 8.1A
Drain-Source On-State Resistance at Vgs 10V: 450mΩ
Total Gate Charge at Vgs 10V: 18nC
Power Dissipation: 38W
▲ THT type
▲ Single N-channel enhancement mode
▲ High cell density for low on-resistance
▲ TO220F-3L package ▲ Electrical insulated mounting tab
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
