SILICON (Si) MOSFET ▲ SINGLE P-Channel
Drain-Source Voltage: -60V
Continuous Drain Current: -13.2A
Drain-Source On-State Resistance at Vgs -10V: 110mΩ
Total Gate Charge at Vgs -4.5V: 8.5nC
Power Dissipation: 34.7W
▲ THT type
▲ Single P-channel enhancement mode
▲ High cell density for low on-resistance
▲ TO-251-3L package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
