SILICON (Si) MOSFET ▲ SINGLE P-Channel
Drain-Source Voltage: -100V
Continuous Drain Current: -9A
Drain-Source On-State Resistance at Vgs -10V: 315mΩ
Total Gate Charge at Vgs -10V: 13nC
Power Dissipation: 50W
▲ SMD type
▲ Single P-channel enhancement mode
▲ High cell density for low on-resistance
▲ TO-252-3L (DPAK) package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
