SILICON (Si) MOSFET ▲ SINGLE P-Channel
Drain-Source Voltage: -30V
Continuous Drain Current: -47A
Drain-Source On-State Resistance at Vgs 10V: 20mΩ
Total Gate Charge at Vgs 5V: 22nC
Power Dissipation: 79W
▲ THT type
▲ Single P-channel enhancement mode
▲ High cell density for low on-resistance
▲ TO-220-3L package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
