SILICON (Si) MOSFET ▲ SINGLE P-Channel
Drain-Source Voltage: -150V
Continuous Drain Current: -15A
Drain-Source On-State Resistance at Vgs -10V: 240mΩ
Total Gate Charge at Vgs -10V: 31nC
Power Dissipation: 96W
▲ SMD type
▲ Single P-channel enhancement mode
▲ High cell density for low on-resistance
▲ TO-263-3L (D2PAK) package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
