SILICON (Si) MOSFET ▲ SINGLE N-Channel
Drain-Source Voltage: 100V
Continuous Drain Current: 3A
Drain-Source On-State Resistance at Vgs 10V: 200mΩ
Total Gate Charge at Vgs 10V: 9.2nC
Power Dissipation: 3W
▲ SMD type
▲ Single N-channel enhancement mode
▲ High cell density for low on-resistance
▲ SOT223 package
▲ RoHS compliant
▲ Rugged and reliable
Datasheet 
