SILICON (Si) MOSFET ▲ SINGLE N-Channel
Drain-Source Voltage: 700V
Continuous Drain Current: 0.4A
Drain-Source On-State Resistance at Vgs 10V: 67.5Ω
Total Gate Charge at Vgs 10V: 12nC
Power Dissipation: 3.1W
▲ THT type
▲ Single N-channel enhancement mode
▲ High cell density for low on-resistance
▲ TO92 package
▲ RoHS compliant
▲ Robust and reliable
Datasheet 
