SILICON (Si) MOSFET ▲ SINGLE P-Channel
Drain-Source Voltage: -60V
Continuous Drain Current: -13.5A
Drain-Source On-State Resistance at Vgs -10V: 86mΩ
Total Gate Charge at Vgs -10V: 25nC
Power Dissipation: 31.25W
▲ SMD type
▲ Single P-channel enhancement mode
▲ High cell density for low on-resistance
▲ PPAK3x3 package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
