SILICON (Si) MOSFET ▲ SINGLE P-Channel
Drain-Source Voltage: -150V
Continuous Drain Current: -4.2A
Drain-Source On-State Resistance at Vgs -10V: 680mΩ
Total Gate Charge at Vgs -6V: 11nC
Power Dissipation: 25W
▲ SMD type
▲ Single P-channel enhancement mode
▲ High cell density for low on-resistance
▲ PPAK3x3 package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
