SILICON (Si) MOSFET ▲ SINGLE N-Channel ▲ ESD protection diode
Drain-Source Voltage: 60V
Continuous Drain Current: 2.5A
Drain-Source On-State Resistance at Vgs 10V: 3Ω
Total Gate Charge at Vgs 10V: 7nC
Power Dissipation: 0.2W
▲ SMD type
▲ Single N-channel enhancement mode with ESD protection diode
▲ High cell density for low on-resistance
▲ SOT23T package
▲ RoHS compliant
▲ Rugged and reliable
Datasheet 
