SILICON (Si) MOSFET ▲ SINGLE N-Channel
Drain-Source Voltage: 100V
Continuous Drain Current: 11A
Drain-Source On-State Resistance at Vgs 10V: 120mΩ
Total Gate Charge at Vgs 10V: 18nC
Power Dissipation: 25W
▲ SMD type
▲ Single N-channel enhancement mode
▲ High cell density for low on-resistance
▲ DFN3x3 package
▲ RoHS compliant
▲ Rugged and reliable
Datasheet 
