SILICON (Si) MOSFET ▲ SINGLE N-Channel ▲ ESD protection diode
Drain-Source Voltage: 20V
Continuous Drain Current: 8A
Drain-Source On-State Resistance at Vgs 4.5V: 20mΩ
Total Gate Charge at Vgs 4.5V: 3.9nC
Power Dissipation: 2W
▲ SMD type
▲ Single N-channel enhancement mode with ESD protection diode
▲ High cell density for low on-resistance
▲ DFN2x2 package
▲ RoHS compliant
▲ Rugged and reliable
Datasheet 
