SILICON (Si) MOSFET ▲ SINGLE P-Channel
Drain-Source Voltage: -150V
Continuous Drain Current: -15A
Drain-Source On-State Resistance at Vgs -10V: 240mΩ
Total Gate Charge at Vgs -10V: 31nC
Power Dissipation: 34W
▲ THT type
▲ Single P-channel enhancement mode
▲ High cell density for low on-resistance
▲ TO220F-3L package ▲ Electrical insulated mounting tab
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
