SILICON (Si) MOSFET ▲ SINGLE P-Channel
Drain-Source Voltage: -150V
Continuous Drain Current: -1.45A
Drain-Source On-State Resistance at Vgs -10V: 720mΩ
Total Gate Charge at Vgs -6V: 11nC
Power Dissipation: 2W
▲ SMD type
▲ Single P-channel enhancement mode
▲ High cell density for low on-resistance
▲ TSOP6 package
▲ RoHS compliant
▲ Rugged and reliable
Datasheet 
