SILICON (Si) MOSFET ▲ SINGLE P-Channel
Drain-Source Voltage: -60V
Continuous Drain Current: -21A
Drain-Source On-State Resistance at Vgs -10V: 48mΩ
Total Gate Charge at Vgs -10V: 26nC
Power Dissipation: 39W
▲ SMD type
▲ Single P-channel enhancement mode
▲ High cell density for low on-resistance
▲ PPAK5x6 package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
