SILICON (Si) MOSFET ▲ N- and P-Channel Pair
Drain-Source Voltage: 60V / -60V
Continuous Drain Current: 4.1A / -3.1A
Drain-Source On-State Resistance at Vgs 10V / -10V: 68mΩ / 130mΩ
Total Gate Charge at Vgs 10V / -10V: 13nC / 11nC
Power Dissipation: 2W
▲ SMD type
▲ N- and P-channel enhancement mode
▲ High cell density for low on-resistance
▲ SO-8 package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
