SILICON (Si) MOSFET ▲ N- and P-Channel Pair
Drain-Source Voltage: 100V / -100V
Continuous Drain Current: 3.4A / -2.2A
Drain-Source On-State Resistance at Vgs 10V / -10V: 110mΩ / 270mΩ
Total Gate Charge at Vgs 10V / -10V: 15nC / 16nC
Power Dissipation: 2W
▲ SMD type
▲ N- and P-channel enhancement mode
▲ High cell density for low on-resistance
▲ SO-8 package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
