SILICON (Si) MOSFET ▲ N- and P-Channel Pair
Drain-Source Voltage: 60V / -60V
Continuous Drain Current: 9A / -6A
Drain-Source On-State Resistance at Vgs 10V / -10V: 72mΩ / 125mΩ
Total Gate Charge at Vgs 4.5V / -4.5V: 7nC / 10nC
Power Dissipation: 10.4W
▲ SMD type
▲ N- and P-channel enhancement mode
▲ High cell density for low on-resistance
▲ TO252-4 (DPAK-4) package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
