SILICON (Si) MOSFET ▲ N- and P-Channel Pair
Drain-Source Voltage: 30V / -30V
Continuous Drain Current: 21A / -16A
Drain-Source On-State Resistance at Vgs 10V / -10V: 26mΩ / 46mΩ
Total Gate Charge at Vgs 10V / -10V: 10.7nC / 11.5nC
Power Dissipation: 18W
▲ SMD type
▲ N- and P-channel enhancement mode
▲ High cell density for low on-resistance
▲ DFN3x3 package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
