SILICON (Si) MOSFET ▲ SINGLE P-Channel
Drain-Source Voltage: -40V
Continuous Drain Current: -31A
Drain-Source On-State Resistance at Vgs -10V: 15.4mΩ
Total Gate Charge at Vgs -4.5V: 19nC
Power Dissipation: 31W
▲ THT type
▲ Single P-channel enhancement mode
▲ High cell density for low on-resistance
▲ TO-251-3L package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
