SILICON (Si) MOSFET ▲ DUAL N-Channel
Drain-Source Voltage: 65V
Continuous Drain Current: 39A
Drain-Source On-State Resistance at Vgs 10V: 8.7mΩ
Total Gate Charge at Vgs 10V: 22nC
Power Dissipation: 31W
▲ SMD type
▲ Dual N-channel enhancement mode
▲ High cell density for low on-resistance
▲ PPAK5x6 package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
