GR-65J075AM is a normally-off GaN High electron mobility transistor (HEMT) device using the cascode configuration, which provides high breakdown voltage, high current andhigh operating speed which is suitable for high power applications.
Features
⚫ Gate drive voltage compatibility (-20V to +20V)
⚫ High operating frequency
⚫ Low Qrr
⚫ 1.5kV HBM ESD
Applications
◼ Switch Mode Power Supplies (SMPS)
◼ AC-DC/DC-DC Converters: Boost, Buck, QR Flyback, ACF, AHB, LLC, Half/Full Bridge Application
◼ Motor Drives, Lighting, Server
Datasheet 
