GR-65J050JT is a normally-off GaN High electron mobility transistor (HEMT) device using the cascode configuration, which provides high breakdown voltage, high current and high operating speed which is suitable for high power applications.
Features
⚫ Gate drive voltage compatibility (-20V to +20V)
⚫ High operating frequency
⚫ Pin to Pin with CoolMOS/SJ and SiC MOSFET
⚫ Low Qrr
⚫ 1.5kV HBM ESD
Applications
◼ Switch Mode Power Supplies (SMPS)
◼ AC-DC/ DC-DC Converters
◼ Motor Drives
Datasheet 
