The GR-10W003DQ is a Gallium Nitride (GaN) FET with integrated driver. The device features High-side and low-side 100V rated GaN FET driven by an optimized high-frequency GaN FET driver. The GR-10W003DQ incorporates a high-side level shifter and bootstrap circuit. This integration allows GR-10W003DQ unit to form a half-bridge topology without the need for external level-shifting circuit and easy-use in paralleling circuit. The driver and the GaN FET are mounted using Flip-chip bond packaging technology, resulting in minimized package parasitic elements.
Features
⚫ Gate drive voltage compatibility
⚫ High operating frequency
⚫ Over temperature protection
⚫ Short circuit protection
⚫ 20 ns typical delay time
Applications
◼ Buck, boost, buck-boost converters
◼ AC-DC/ DC-DC Converters
◼ Motor Drives
Datasheet 
