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SiC FET ▲ 1200V ▲ 32mΩ ▲ 84A ▲ B1M032120HK

SKU: B1M032120HK
Product Details

SILICON CARBIDE (SiC) MOSFET


Drain-Source Voltage: 1200V

Continuous Drain Current: 84A

Drain-Source On-State Resistance: 32mΩ

Reverse Transfer Capacitance: 33pF

Power Dissipation: 335W 


▲ THT type

▲ N-channel enhancement mode

▲ Low on-resistance and capacitance

▲ TO-247-4L package with Kelvin Source connection

▲ Avalanche ruggedness

▲ Elimination of voltage drops over the source inductance



Datasheet 

SiC FET ▲ 1200V ▲ 32mΩ ▲ 84A ▲ B1M032120HK