SILICON (Si) MOSFET ▲ DUAL P-Channel
Drain-Source Voltage: -20V
Continuous Drain Current: -3.3A
Drain-Source On-State Resistance at Vgs -4.5V: 65mΩ
Total Gate Charge at Vgs -4.5V: 5.7nC
Power Dissipation: 1.1W
▲ SMD type
▲ Dual P-channel enhancement mode
▲ High cell density for low on-resistance
▲ TSOP6 package
▲ RoHS compliant
▲ Rugged and reliable
Datasheet 
