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SiC FET ▲ 1200V ▲ 78mΩ ▲ 30A ▲ CEW30SM120

SKU: CEW30SM120
Product Details

SILICON CARBIDE (SiC) MOSFET


Drain-Source Voltage: 1200V

Continuous Drain Current: 30A

Drain-Source On-State Resistance: 78mΩ

Reverse Transfer Capacitance: 7pF

Power Dissipation: 170W 


▲ THT type

▲ N-channel enhancement mode

▲ Low on-resistance and capacitance

▲ TO-247-4L package with Kelvin Source connection

▲ Avalanche ruggedness

▲ Elimination of voltage drops over the source inductance



Datasheet 

SiC FET ▲ 1200V ▲ 78mΩ ▲ 30A ▲ CEW30SM120