SILICON (Si) MOSFET ▲ SINGLE N-Channel
Drain-Source Voltage: 650V
Continuous Drain Current: 46.7A
Drain-Source On-State Resistance at Vgs 10V: 46mΩ
Total Gate Charge at Vgs 10V: 100nC
Power Dissipation: 305W
▲ THT type
▲ Single N-channel enhancement mode
▲ High cell density for low on-resistance
▲ TO247-3L package
▲ RoHS compliant
▲ High power and current handling capability
Datasheet 
